Effects of edge roughness on optical scattering from periodic microstructures

Planar photonic crystals and other microstructured surfaces have important applications in a number of emerging technologies. However, these structures can be difficult to fabricate in a consistent manner. Rapid, precise measurements of critical parameters are needed to control the fabrication process, but current measurement techniques tend to be slow and often require that the sample be modified in order to make the measurement. Optical scattering can provide a rapid, non-destructive, and precise method for measuring these structures, and optical scatterometry is a good candidate technique for measuring micro-structured surfaces for process control. However, variations in the profile, such as those caused by edge roughness, can make significant contributions to the uncertainty in scatterometry measurements. Because of the multi- dimensional nature of the problem, modeling these variations can be computationally expensive. This dissertation examines the effects of edge roughness on optical scatterometry signals. Rigorous numerical simulations show that the effects of edge roughness are sensitive to the correlation length and the frequency content of the roughness as well as its amplitude. However, these rigorous calculations are computationally expensive. A less computationally expensive model based on a generalized Bruggeman effective medium approximation is developed and shown to be effective for modeling the effects of short correlation length edge roughness on optical scatterometry signals

Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture

International audienceWe used azimuthally-resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line edge roughness (LER). The unperturbed, reference grating profile was determined from multiple azimuthal configurations using a generalized ellipsometer, focusing the incident beam into a 60 μm spot. We used rigorous numerical modeling, taking into account the finite numerical aperture, introducing significant depolarization effects, and determining the profile shape using a four trapezoid model for the line profile. Data obtained from the artificially perturbed grating were then fit using the same model, and the resulting root-mean-square error (RMSE) values for both targets were compared. The comparison shows an increase in RMSE values for the perturbed grating that can be attributed to the effects of LER

Generalized ellipsometry of artificially designed line width roughness

International audienceWe use azimuthally resolved spectroscopic Mueller matrix ellipsometry to study a periodic silicon line structure with and without artificially-generated line width roughness (LWR). We model the artificially perturbed grating using one- and two-dimensional rigorous coupled-wave methods in order to evaluate the sensitivity of the experimental spectrally resolved data, measured using a generalized ellipsometer, to the dimensional parameters of LWR. The sensitivity is investigated in the context of multiple conical mounting (azimuth angle) configurations, providing more information about the grating profile